Ramtron (RMTR) Ships First F-RAM Samples Built on New IBM Manufacturing Line May 25, 2011 (Business Wire) — Ramtron International Corporation (Nasdaq: RMTR), a leading developer and supplier of ferroelectric-based low-power memory and integrated semiconductor products, today announced broad sampling of the first pre-qualification ferroelectric random access memory (F-RAM) devices built on the company's new <a href="http://www.boseling.com/"><strong>bose headphones</strong></a> manufacturing line at IBM Corporation (NYSE: IBM). The FM24C04C and FM24C16C are serial 5-volt devices with 4- and 16-kilobits of F-RAM memory, respectively. The devices offer a high-performance nonvolatile data collection and storage solution for electronic systems. Ramtron's F-RAM products provide nonvolatile RAM memory performance with NoDelay™ writes, high read/write endurance, and low power consumption. "Releasing samples of the FM24C04C and FM24C16C devices is a significant milestone in our new foundry program," said Eric Balzer, Ramtron's CEO. "These pre-qualification devices, which meet all datasheet specifications and our stringent quality standards, are available now for customer evaluation. Additional devices, including 3-volt I2C and 3- and 5-volt SPI products, will become available for sampling as testing is completed." The FM24C04C and FM24C16C feature a serial I2C interface, have an active current of 100µA (typical at 100kHz) and perform up to 1MHz bus frequency. The devices are direct drop-in replacements for 4- and 16-Kb serial EEPROM memories used in industrial controls, metering, medical, military, gaming, and computing applications, among others. The FM24C04C and FM24C16C are offered in an industry standard 8-pin SOIC package and operate over the industrial temperature range of -40°C to +85°C. Ramtron's FM24CxxC products offer single-byte writes that are 200 times faster than those of EEPROM. In addition, the devices offer no timing delays and can be written to <a href="http://www.boseling.com/"><strong>Dre Beats Headphones</strong></a> at standard bus speeds as compared to EEPROM, which requires a 5- to 10-millisecond write delay before new data can be registered. The FM24C04C and FM24C16C feature 1-trillion write cycles, compared to 1-million write cycles for EEPROM, and have an extremely low operating current compared to competing nonvolatile memory products. About the IBM/Ramtron Foundry Relationship Ramtron and IBM entered into a foundry services agreement in early 2009 that called for the installation of Ramtron's F-RAM semiconductor process technology in IBM's Burlington, Vermont, advanced wafer manufacturing facility. Ramtron's proprietary F-RAM technology stack has been inserted into IBM's 0.18 micron CMOS process to create Ramtron's signature high-performance nonvolatile F-RAM products. IBM's world-class foundry provides a flexible and cost effective manufacturing platform for Ramtron's existing products and new product development initiatives. About Ramtron and F-RAM Technology Ramtron International Corporation, headquartered in Colorado Springs, Colorado, is a fabless semiconductor company that designs, develops and markets specialized semiconductor memory and integrated semiconductor solutions used in a wide range of product applications and markets worldwide. Ramtron pioneered the integration of ferroelectric materials into semiconductor products, which enabled the development of a new class of nonvolatile memory, called ferroelectric random access memory, or F-RAM. Ramtron's ferroelectric memories combine the high speed of DRAM (Dynamic Random Access Memory) <a href="http://www.boseling.com/"><strong>beats by dre</strong></a> with nonvolatile data storage, or the ability to save data without power. Since commercializing the technology, Ramtron has sold nearly a half-billion F-RAM devices into demanding applications such as automotive safety and entertainment systems, portable medical devices, industrial process control systems, smart electricity meters, and consumer printer cartridges. As the most power-efficient of any nonvolatile memory technology on the market, F-RAM products promise to pave the way for the development of ultra-efficient battery powered products and energy harvesting applications, among others. For more information, visit
www.ramtron.com. Safe Harbor Statement "Safe Harbor" Statement under the Private Securities Litigation Reform Act of 1995: Statements herein that are not historical facts are "forward-looking statements." These forward-looking statements involve risks, uncertainties and assumptions that could cause actual outcomes and results <a href="http://www.greentownfc.com/blog/blog.php?do=showone&uid=5233&type=blog&itemid=4598 53"><strong>Latest frm Fujitsu! – Do you feel the same? | Lokalhost.com</strong></a> to differ materially from those indicated by these forward-looking statements. Please refer to Ramtron's Securities and Exchange Commission filings for a discussion of such risks. The forward-looking statements in this report are being made as of the date of this report, and Ramtron expressly disclaims any obligation to update or revise any forward-looking statements contained herein. Ramtron International Corporation PR: Christopher Wray, 719-481-7182
chris.wray@ramtron.com or IR: Lee A. Brown, 719-481-7213
lee.brown@ramtron.com